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MMBD352LT1G - 

DIODE, MIXER; 10MA IF; 300 MW @ 25C; 556C/W (MAX.); 1 PF (MAX.); SOT-23

ON Semiconductor MMBD352LT1G
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制造商產(chǎn)品編號：
MMBD352LT1G
倉庫庫存編號：
70099522
技術(shù)數(shù)據(jù)表：
View MMBD352LT1G Datasheet Datasheet
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MMBD352LT1G產(chǎn)品概述

RF Band Switching Diodes, ON Semiconductor
RF (Radio Frequency) diodes suitable for use in HF, RF and Microwave mixing and detection applications.

MMBD352LT1G產(chǎn)品信息

  Brand/Series  Diode Rectifier Series  
  Capacitance, Junction  1 pF  
  Configuration  Dual  
  Current, Forward  10 mA  
  Package Type  SOT-23  
  Power Dissipation  225 mW  
  Primary Type  Schottky Barrier  
  Temperature, Junction, Maximum  +150 °C  
  Temperature, Operating  -55 to +150 °C  
  Voltage, Forward  0.6 V  
  Voltage, Reverse  7 V  
關(guān)鍵詞         

MMBD352LT1G相關(guān)搜索

Brand/Series Diode Rectifier Series  ON Semiconductor Brand/Series Diode Rectifier Series  Rectifier & Schottky Diodes Brand/Series Diode Rectifier Series  ON Semiconductor Rectifier & Schottky Diodes Brand/Series Diode Rectifier Series   Capacitance, Junction 1 pF  ON Semiconductor Capacitance, Junction 1 pF  Rectifier & Schottky Diodes Capacitance, Junction 1 pF  ON Semiconductor Rectifier & Schottky Diodes Capacitance, Junction 1 pF   Configuration Dual  ON Semiconductor Configuration Dual  Rectifier & Schottky Diodes Configuration Dual  ON Semiconductor Rectifier & Schottky Diodes Configuration Dual   Current, Forward 10 mA  ON Semiconductor Current, Forward 10 mA  Rectifier & Schottky Diodes Current, Forward 10 mA  ON Semiconductor Rectifier & Schottky Diodes Current, Forward 10 mA   Package Type SOT-23  ON Semiconductor Package Type SOT-23  Rectifier & Schottky Diodes Package Type SOT-23  ON Semiconductor Rectifier & Schottky Diodes Package Type SOT-23   Power Dissipation 225 mW  ON Semiconductor Power Dissipation 225 mW  Rectifier & Schottky Diodes Power Dissipation 225 mW  ON Semiconductor Rectifier & Schottky Diodes Power Dissipation 225 mW   Primary Type Schottky Barrier  ON Semiconductor Primary Type Schottky Barrier  Rectifier & Schottky Diodes Primary Type Schottky Barrier  ON Semiconductor Rectifier & Schottky Diodes Primary Type Schottky Barrier   Temperature, Junction, Maximum +150 °C  ON Semiconductor Temperature, Junction, Maximum +150 °C  Rectifier & Schottky Diodes Temperature, Junction, Maximum +150 °C  ON Semiconductor Rectifier & Schottky Diodes Temperature, Junction, Maximum +150 °C   Temperature, Operating -55 to +150 °C  ON Semiconductor Temperature, Operating -55 to +150 °C  Rectifier & Schottky Diodes Temperature, Operating -55 to +150 °C  ON Semiconductor Rectifier & Schottky Diodes Temperature, Operating -55 to +150 °C   Voltage, Forward 0.6 V  ON Semiconductor Voltage, Forward 0.6 V  Rectifier & Schottky Diodes Voltage, Forward 0.6 V  ON Semiconductor Rectifier & Schottky Diodes Voltage, Forward 0.6 V   Voltage, Reverse 7 V  ON Semiconductor Voltage, Reverse 7 V  Rectifier & Schottky Diodes Voltage, Reverse 7 V  ON Semiconductor Rectifier & Schottky Diodes Voltage, Reverse 7 V  
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