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SI1013R-T1-GE3 - 

MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.8Ohm; ID -350mA; SC-75A (SOT-416); PD 150mW

Siliconix / Vishay SI1013R-T1-GE3
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制造商產(chǎn)品編號(hào):
SI1013R-T1-GE3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026087
技術(shù)數(shù)據(jù)表:
View SI1013R-T1-GE3 Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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SI1013R-T1-GE3產(chǎn)品概述

Features:
  • Halogen-free According to IEC 61249-2-21 Available
  • Low On-Resistance: 2 Ω
  • Low Threshold: 2 V (Typ.)
  • Low Input Capacitance: 25 pF
  • Fast Switching Speed: 25 ns
  • Low Input and Output Leakage
  • TrenchFET® Power MOSFET
  • 2000 V ESD Protection

    Applications:
  • Direct Logic-Level Interface: TTL/CMOS
  • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
  • Battery Operated Systems
  • Solid State Relays
  • SI1013R-T1-GE3產(chǎn)品信息

      Brand/Series  SI10 Series  
      Channel Mode  Enhancement  
      Channel Type  P  
      Configuration  Single  
      Current, Drain  -0.35 A  
      Dimensions  1.68 x 0.86 x 0.8 mm  
      Gate Charge, Total  1.5 nC  
      Height  0.031" (0.8mm)  
      Length  0.066" (1.68mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  SC-75A  
      Polarization  P-Channel  
      Power Dissipation  0.15 W  
      Resistance, Drain to Source On  2.7 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  35 ns  
      Time, Turn-On Delay  5 ns  
      Transconductance, Forward  0.4 S  
      Typical Gate Charge @ Vgs  1500 nC @ -10 V  
      Voltage, Breakdown, Drain to Source  -20 V  
      Voltage, Drain to Source  -20 V  
      Voltage, Forward, Diode  -0.8 V  
      Voltage, Gate to Source  ±6 V  
      Width  0.034" (0.86mm)  
    關(guān)鍵詞         

    SI1013R-T1-GE3相關(guān)搜索

    Brand/Series SI10 Series  Siliconix / Vishay Brand/Series SI10 Series  MOSFET Transistors Brand/Series SI10 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI10 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain -0.35 A  Siliconix / Vishay Current, Drain -0.35 A  MOSFET Transistors Current, Drain -0.35 A  Siliconix / Vishay MOSFET Transistors Current, Drain -0.35 A   Dimensions 1.68 x 0.86 x 0.8 mm  Siliconix / Vishay Dimensions 1.68 x 0.86 x 0.8 mm  MOSFET Transistors Dimensions 1.68 x 0.86 x 0.8 mm  Siliconix / Vishay MOSFET Transistors Dimensions 1.68 x 0.86 x 0.8 mm   Gate Charge, Total 1.5 nC  Siliconix / Vishay Gate Charge, Total 1.5 nC  MOSFET Transistors Gate Charge, Total 1.5 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 1.5 nC   Height 0.031" (0.8mm)  Siliconix / Vishay Height 0.031" (0.8mm)  MOSFET Transistors Height 0.031" (0.8mm)  Siliconix / Vishay MOSFET Transistors Height 0.031" (0.8mm)   Length 0.066" (1.68mm)  Siliconix / Vishay Length 0.066" (1.68mm)  MOSFET Transistors Length 0.066" (1.68mm)  Siliconix / Vishay MOSFET Transistors Length 0.066" (1.68mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Package Type SC-75A  Siliconix / Vishay Package Type SC-75A  MOSFET Transistors Package Type SC-75A  Siliconix / Vishay MOSFET Transistors Package Type SC-75A   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 0.15 W  Siliconix / Vishay Power Dissipation 0.15 W  MOSFET Transistors Power Dissipation 0.15 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 0.15 W   Resistance, Drain to Source On 2.7 Ω  Siliconix / Vishay Resistance, Drain to Source On 2.7 Ω  MOSFET Transistors Resistance, Drain to Source On 2.7 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 2.7 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 35 ns  Siliconix / Vishay Time, Turn-Off Delay 35 ns  MOSFET Transistors Time, Turn-Off Delay 35 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 35 ns   Time, Turn-On Delay 5 ns  Siliconix / Vishay Time, Turn-On Delay 5 ns  MOSFET Transistors Time, Turn-On Delay 5 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 5 ns   Transconductance, Forward 0.4 S  Siliconix / Vishay Transconductance, Forward 0.4 S  MOSFET Transistors Transconductance, Forward 0.4 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 0.4 S   Typical Gate Charge @ Vgs 1500 nC @ -10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 1500 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 1500 nC @ -10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 1500 nC @ -10 V   Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V   Voltage, Drain to Source -20 V  Siliconix / Vishay Voltage, Drain to Source -20 V  MOSFET Transistors Voltage, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -20 V   Voltage, Forward, Diode -0.8 V  Siliconix / Vishay Voltage, Forward, Diode -0.8 V  MOSFET Transistors Voltage, Forward, Diode -0.8 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -0.8 V   Voltage, Gate to Source ±6 V  Siliconix / Vishay Voltage, Gate to Source ±6 V  MOSFET Transistors Voltage, Gate to Source ±6 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±6 V   Width 0.034" (0.86mm)  Siliconix / Vishay Width 0.034" (0.86mm)  MOSFET Transistors Width 0.034" (0.86mm)  Siliconix / Vishay MOSFET Transistors Width 0.034" (0.86mm)  
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